Cathodoluminescence Study of Damage Formation and Recovery in Si-ion-implanted β-Ga 2 O 3

Gallium oxide (Ga 2 O 3 ) is one of the ultra-wide-bandgap (UWBG) semiconductors suitable for power-device applications [ 1 – 7 ]. Ion implantation and activation annealing are important processes to create an ideal local carrier distribution in the device. N-type regions have been successfully fabricated using Si-ion and other group-IV-ion implantations [ 8 – 15 ]. However, ion implantation gener...