Source/Drain Contact Engineering of InGaZnO Channel BEOL Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect

We have demonstrated suppression of channel shortening and reduction of Source/Drain (S/D) parasitic resistance (Rpara) in InGaZnO (IGZO) channel FETs after high temperature annealing by inserting an InAlZnO (IAZO) contact layer (CL) between the S/D electrodes and the IGZO channel. Thanks to high bond dissociation energy of Al with oxygen, a tungsten (W) film covered by IAZO maintained ...