Study of HfSiO x film as gate insulator for GaN power device

Toshihide Nabatame,Erika Maeda,Mari Inoue,Ryota Ochi,Yoshihiro Irokawa,Tamotsu Hashizume,Koji Shiozaki,Yasuo Koide

2021 20th International Workshop on Junction Technology (IWJT)（2021）

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摘要

Gallium nitride (GaN) high-electron-mobility transistor (HEMT) and vertical GaN metal-oxide-semiconductor (MOS) devices have potential application to high power and high frequency because of their superior characteristics, such as wide band gap (B g ), high electron saturation velocity, and a high critical breakdown voltage [ 1 – 3 ]. Gate insulator plays an important role to suppress the leakage ...

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