Stress relaxation and dopant activation in nsec laser annealed SiGe

Defect evolution and dopant activation are intimately related to the use of ion implantation and annealing, traditionally used to dope semiconductors during device fabrication. However, during the last decade, the increased difficulties to maintain the transistor miniaturization pace have led to a diversification of both the basic device architecture and processes. In this context, the recent adva...