Advanced process and electron device technology

Tsinghua Science and Technology（2022）

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摘要

This article reviews advanced process and electron device technology of integrated circuits, including recent featuring progress and potential solutions for future development. In 5 years, for pushing the performance of fin field-effect transistors (FinFET) to its limitations, several processes and device boosters are provided. Then, the three-dimensional (3D) integration schemes with alternative ...

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关键词

advanced process,gate-all-around devices,three-dimensional (3D) integration,high-mobility channel,integrated circuits

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