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Program Charge Interference and Mitigation in Vertically Scaled Single and Multiple-Channel 3D NAND Flash Memory

2021 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2021)(2021)

Cited 4|Views4
Key words
Solid modeling,Three-dimensional displays,Atmospheric modeling,Interference,Logic gates,Split gate flash memory cells,Threshold voltage
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