Equivalent Circuit Macro-Compact Model of the 1T Bipolar SRAM Cell
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)(2021)
摘要
In this work we report the development of a macro-compact model of the one-transistor (1T) bipolar SRAM Cell based on an equivalent circuit representation. The compact model consists of a combination of MOSFET, BJT, and other passive components. We start with calibration of the TCAD deck using experimental data and realize the operation of the 1T SRAM cell. Then we calibrate the different componen...
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关键词
Semiconductor device modeling,Simulation,Switches,SRAM cells,SPICE,Data models,Stability analysis
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