Impact of metal grain granularity on three gate-all-around advanced architectures

The impact of metal grain granularity (MGG) on the threshold voltage $\left(V_{T h}\right)$ is compared for three different CMOS nanoscale multi-gate architectures with similar dimensions. The MGG of the gate stack induces the most pronounced variability in the device characteristics of non-planar architectures. We use the fluctuation sensitivity map (FSM) technique to evaluate which part of the c...