Experimental Analysis of Trade-Off Between Transistor Efficiency and Unit Gain Frequency of Nanosheet NMOS Transistors

This work presents a trade-off analysis between transistor efficiency (gm/ID which is proportional to the intrinsic voltage gain Av) and the unit gain frequency (fT) of the nanosheet (NSH) NMOS devices. The analyses were performed experimentally as a function of the inversion coefficient (weak, moderate, or strong inversion levels-IC) in order to determine the best...