The impact of driving capacity on single-event effect vulnerability of standard cell
2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)（2021）
Abstract
The impacts of driving capacity on single-event effect vulnerability of 40 nm standard cells were studied. The result shows that cells with high driving capacity are inclined to have stronger single-event effect tolerance. AND gate has smaller SET cross section and transient pulse width than OR gate and D flip-flop.
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Key words
driving capacity,standard cell,single-event effect
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