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Impact of Ge Profile on TID Susceptibility of SiGe HBTs

Jianan Wei,Chaohui He,Peijian Zhang,Xiaojun Fu,Hongxia Guo,Ting Luo

2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)（2021）

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Abstract
The impact of Ge profile on the TID susceptibility of SiGe HBTs from two manufacturers is investigated based on TCAD simulation. The results indicate that the modulation of potential distribution across the base region by Ge grading has significant impacts on the base current degradation. The Box Ge profile can cause a strong retarding potential near the EB junction, thereby leading to high recomb...
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Key words
SiGe HBT,Total ionizing dose,Ge profile
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