Transient radiation effects in several types of LDO

Ruibin Li,Junlin Li,Chenhui Wang,Chaohui He,Wei Chen,Xiaoming Jin,Chao Qi,Xiaoyan Bai,Yan Liu,Guizhen Wang

2021 4th International Conference on Radiation Effects of Electronic Devices (ICREED)（2021）

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摘要

several types of Low drop-out (LDO) regulator, manufactured in different technologies, are irradiated in the transient radiation environment. The experimental results show that outputs of all of LDOs are disrupted when irradiated. For the LDO manufactured in the complimentary metal-oxide -semiconductor (CMOS) technology, latch up (LU) occurs at the lower dose rate due to the parasitical PNPN struc...

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关键词

Low drop-out (LDO),ionizing radiation,dose rate,pulsed radiation

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