Junction Leakage Random Telegraph Signals in Arrays of MOSFETs

H. Dewitte,V. Goiffon,A. Le Roch,S. Rizzolo,A. Jay,M. Jech,A. Hémeryck,P. Paillet

IEEE Electron Device Letters（2021）

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摘要

This letter presents an experimental study of the junction leakage RTS (JL-RTS) in a large set of MOSFET p-n junctions. Arrays of MOSFETs are used to statistically study the effects of the temperature, the electric field, and the source/drain design. The results, supported by ab initio molecular dynamic simulations, advocate for the adoption of the structural fluctuation model over the state charg...

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关键词

MOSFET,P-n junctions,Current measurement,Transistors,Sociology,Temperature measurement,Switches

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