Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm 2
IEEE Transactions on Electron Devices(2021)
摘要
This work demonstrates a novel Nitrogen-implanted (N-implanted) guard ring (GR) technology for the 600-V quasi-vertical GaN-on-Si Schottky barrier diode (SBD). The GR parameters are designed and studied in detail by the TCAD simulation. With a 4.4- $\mu \text{m}$ -thick GaN drift layer, seven GRs with a precise design greatly e...
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关键词
Leakage currents,Junctions,Sun,Silicon,Schottky diodes,Substrates,Nitrogen
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