High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs
IEEE Transactions on Electron Devices(2021)
Abstract
In this article, we present an in-depth high-temperature analysis of the long-term gate reliability in GaN-based power high-electron-mobility transistors (HEMTs) with p-type gate. Three different isolation process options, aimed at improving the time-dependent gate breakdown (TDGB), are proposed and compared by means of constant voltage stress tests performed at different forward gate biases, temp...
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Key words
Logic gates,Electric breakdown,HEMTs,MODFETs,Stress,Reliability,Metals
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