New 10V to 1V level shifter based on new N/PMOS high voltage in FDSOI technology
2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)（2021）
摘要
The main purpose of this study is to introduce a new way to build a high voltage (HV) level shifter based on new HV N/P MOS transistors. The approach is to develop and to characterize dual HV MOS devices in thin silicon film on the 28 nm UTBB FDSOI technology . Afterwards, a basic level shifter design allows to translate 10V on input signal to 1V on the output signal for a direct application in th...
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关键词
Temperature measurement,Performance evaluation,Voltage measurement,Silicon-on-insulator,Transfer functions,High-voltage techniques,Logic gates
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