Computational Study of Electronic Properties of X-doped Hexagonal Boron Nitride (H-Bn): X = (li, Be, Al, C, Si)

TPD, Pakistan Institute of Nuclear Science and Technology (PINSTECH),Hussain Akhtar,Kashif Muhammad, International Islamic University,Rafique Hafiz Muhammad

Journal of Molecular Modeling（2021）

Cited 9|Views10

Key words

DFT,Electronic properties,Band gap,h-BN

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