MOSFETs under short circuit conditions for aeronautical applications

2021 56th International Universities Power Engineering Conference (UPEC)(2021)

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摘要
The short circuit performance of silicon carbide MOSFETs has been evaluated in a 270 V system designed to mimic the characteristics of a commercial airliner power system. The devices demonstrated the ability to withstand being short–circuited for a period of 8 µs before suffering a catastrophic failure when that coincided with the turn–off transient for a 9 µs pulse. At the point of turn off the j...
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关键词
Resistance,MOSFET,Circuit optimization,Temperature,Silicon carbide,Voltage,Rendering (computer graphics)
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