Regulation Of Hole Concentration And Mobility And First-Principle Analysis Of Mg-Doping In Ingan Grown By Mocvd

This work studied the regulation of hole concentration and mobility in p-InGaN layers grown by metalorganic chemical vapor deposition (MOCVD) under an N-rich environment. By adjusting the growth temperature, the hole concentration can be controlled between 6 x 10(17)/cm(3) and 3 x 10(19)/cm(3) with adjustable hole mobility from 3 to 16 cm(2)/V.s. These p-InGaN layers can meet different requirements of devices for hole concentration and mobility. First-principles defect calculations indicate that the p-type doping of InGaN at the N-rich limiting condition mainly originated from Mg substituting In (Mg-In). In contrast with the compensation of nitrogen vacancy in p-type InGaN grown in a Ga-rich environment, the holes in p-type InGaN grown in an N-rich environment were mainly compensated by interstitial Mg (Mg-i), which has very low formation energy.