Total Ionizing Dose Effects on Nanosheet Gate-All-Around MOSFETs Built on Void Embedded Silicon on Insulator Substrate

Lantian Zhao,Qiang Liu,Chenhe Liu,Lingli Chen,Yumeng Yang,Xing Wei,Zhiqiang Mu,Wenjie Yu

IEEE Electron Device Letters（2021）

引用 4|浏览14

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摘要

The total ionizing dose response of nanosheet gate-all-around metal-oxide-semiconductor field effect transistor (NS GAA MOSFET) fabricated on novel void-embedded silicon on insulator (VESOI) substrate was investigated in this work. Strong radiation tolerance with as small as 46.6mV threshold voltage shift and non-discernable increase of off-state current were observed even at a dose of 7Mrad(Si) X...

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关键词

Gallium arsenide,Logic gates,Substrates,Silicon-on-insulator,MOSFET,Total ionizing dose,Performance evaluation

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