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Impact of V th Instability on Time-Resolved Characteristics of MIS-HEMT-Based GaN Power IC

Lan Bi,Qimeng Jiang,Sen Huang,Xinhua Wang,Yingjie Wang,Yuchen Li,Fuqiang Guo,Tiantian Luan,Yang Liu,Jie Fan,Haibo Yin,Ke Wei,Yingkui Zheng,Yankui Li,Xinyu Liu

IEEE Electron Device Letters（2021）

Cited 4|Views21
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Abstract
The impact of dynamic threshold voltage ( ${V}_{{\text {th}}}$ ) on the real-time characteristics of GaN direct-coupled FET logic (DCFL) inverter is investigated using an in-situ voltage tracking method. Due to the electrons’ trapping/de-trapping process at the gate dielectric/AlGaN-barrier interface, a two-step positive shift ...
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Key words
Inverters,Logic gates,Integrated circuits,Transient analysis,Threshold voltage,Switches,Switching circuits
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