Simulations of Statistical Variability in n -Type FinFET, Nanowire, and Nanosheet FETs

Natalia Seoane,Julian G. Fernandez,Karol Kalna,Enrique Comesaña,Antonio García-Loureiro

IEEE Electron Device Letters（2021）

引用 29|浏览6

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摘要

Four sources of variability, metal grain granularity (MGG), line-edge roughness (LER), gate-edge roughness (GER), and random discrete dopants (RDD), affecting the performance of state-of-the-art FinFET, nanosheet (NS), and nanowire (NW) FETs, are analysed via our in-house 3D finite-element drift-diffusion/Monte Carlo simulator that includes 2D Schrödinger equation quantum corrections. The MGG and ...

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关键词

Field effect transistors,FinFETs,Logic gates,Three-dimensional displays,Mathematical model,Strain,Performance evaluation

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