Hybrid Data-Driven Modeling Methodology for Fast and Accurate Transient Simulation of SiC MOSFETs

To enable fast and accurate models of SiC MOSFETs for transient simulation, a hybrid data-driven modeling methodology of SiC MOSFETs is proposed. Unlike conventional modeling methods that are based on complex nonlinear equations, data-driven artificial neural networks (ANNs) are used in this article. For model accuracy, the $I$...