Selective deposition of AlOx for Fully Aligned Via in nano Cu interconnects

2021 IEEE International Interconnect Technology Conference (IITC)(2021)

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Abstract
AlOx was selectively deposited on top of SiCOH in 32 nm pitch Cu-SiCOH pattern to form a Fully Aligned Via (FAV) test structure. Selective deposition process performance and its integration into the 5nm BEOL FAV structure were evaluated. The selective AlOx deposition involves multistep process including surface treatment, selective Self-Aligned Molecules (SAM) bonding to inhibit Cu metal surface, ...
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Key words
Conferences,Metals,Dielectric measurement,Dielectrics,Chemical vapor deposition,Bonding,Surface treatment
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