Reliability of Barrierless PVD Mo

Davide Tierno,M. Hosseini,M. van der Veen,A. Dangol,K. Croes,S. Demuynck,Zs. Tőkei,E.D. Litta,N. Horiguchi

2021 IEEE International Interconnect Technology Conference (IITC)（2021）

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摘要

We evaluate the reliability of barrierless Mo metallization on various dielectrics that are used in both BEOL and MOL integration schemes. In particular, we assess the risk of metal drift-induced failure in SiO2, LK3.0, SiCO and Si3N4 films by performing TDDB measurements on MIM planar capacitors. We show that Mo does not drift in SiO2, LK3.0, and SiCO. ...

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关键词

Metallization,Films,Conferences,Capacitors,Failure analysis,Particle measurements,Silicon

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