An Extended-Gate Field-Effect Transistor Applied to Resistive Divider Integrated With the Readout Circuit Using 180nm CMOS Process for Uric Acid Detection

In this work, an extended-gate field-effect transistor (EGFET) applied to resistive divider integrated with the low unity-gain frequency and power consumption instrumentation amplifier (UGFPCIA) was developed successfully in a chip by the Taiwan Semiconductor Manufacturing Company (TSMC) 180nm CMOS process technology. The EGFET was designed based on the uricase/ruthenium dioxide (RuO2) ...