Selector Failure Detection For Resistive Random Access Memories

2021 IEEE INTERNATIONAL SYMPOSIUM ON INFORMATION THEORY (ISIT)(2021)

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摘要
The sneak path (SP) interference problem in resistive random access memory (ReRAM) severely affects the data storage reliability. Recent works showed that the occurrence of the SP is highly related to the selector failures (SFs) in the resistive memory arrays. In this work, we propose a novel scheme to detect the location of the failed selector, based on the signal read back from the memory array. The detected SF location information can be used to assist the data detection to mitigate the SP interference or to construct SP-free constrained codes.
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关键词
resistive random access memory,sneak path interference problem,data storage reliability,resistive memory arrays,data detection,selector failure detection,SF location information
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