Exploiting Resistance Drift Characteristics to Improve Reliability of LDPC-Assisted Phase-Change Memory

Meng Zhang,Fei Wu,Qin Yu,Weihua Liu,Ruixiang Ma,Changsheng Xie

IEEE Transactions on Device and Materials Reliability（2021）

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摘要

Phase-change memory (PCM) as emerging non-volatile memory has attracted more attention and considered as the promising replacement of the main memory. PCM has shown good scalability and high storage density, but data storage reliability has become a challenge and concern. When data are written into PCM cells by a phase transition between amorphous and crystalline, the resistance of each state drif...

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关键词

Resistance,Phase change materials,Iterative decoding,Programming,Memory,Electrodes,Simulation

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