MBE Growth and Characterization of InAlGaAs/GaAs Quantum Dots

Riazul Arefin,Seunghyun Lee,Hyemin Jung,Jaedu Ha,Jong Su Kim,Sanjay Krishna,Shamsul Arafin

2021 IEEE Research and Applications of Photonics in Defense Conference (RAPID)（2021）

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摘要

InAlGaAs/GaAs quantum dots (QDs) are grown by molecular beam epitaxy and subsequently characterized to achieve emission $\lt 1\ \mu$m. Growth parameters are optimized to grow a new generation of homogeneous quaternary QDs with a PL FWHM of $\sim 60\ \mathrm{meV}$ and a surface density of $\gt10^{10} \mathrm{~cm}^{-2}$.

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关键词

Quantum dot lasers,Laser radar,Stimulated emission,Quantum dots,Molecular beam epitaxial growth,Quantum mechanics,Optical sensors

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