Sub-10-nm Air Channel Field Emission Device With Ultra-Low Operating Voltage

IEEE Electron Device Letters(2021)

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摘要
In this letter, sub-10-nm air channel devices were fabricated with the aid of photolithography and focused ion beam (FIB) etching. Field emission (FE) properties of the device were measured under ambient conditions. The operation mechanism was discussed by means of current-voltage (I-V) curve fitting and energy band diagram analysis. On account of the extremely shrinking of nano-gap, record-high e...
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关键词
Nanoscale devices,Tunneling,Etching,Performance evaluation,Lithography,Fans,Semiconductor device measurement
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