Enhancement of Performance for an SOI SiGe HBT with Si 1-y Ge y Collector*

The performance of SOI SiGe HBT structure was enhanced by introducing a buried oxide layer and Si1-yGey collector. Both the base region and the emitter region are subjected to the action of stress, so the characteristic frequency and the current gain are improved. The effects of different step type distributions of Ge mole fraction in the Si1-xGex base a...