A Ka-Band T/R Chip in 0.15μm PHEMT Technology.

This paper presents a Ka-band T/R chip based on Win PP15 technology, which involves RF switch, low noise amplifier, temperature compensated attenuator and power amplifier. This design based on GaAs process, which has advantages in frequency, output power and noise. A series of techniques, such as source inductance negative feedback, temperature compensation and power synthesis used in the T/R chip to have better performances in output power, noise and temperature characteristics. The test results show that for the receiving branch, the noise is less than 3.7dB, the gain is 28dB and the gain fluctuates 4.5dB between high and low temperature, for the transmit branch, the gain is 30dB and the saturated output power is 27.3dBm, the maximum PAE of saturated output power is 22%. The size of the chip is 3.6mm*1.7mm.