Organic resistive random access memorizer and preparation method thereof

The invention provides an organic resistive random access memory and a preparation method thereof, which belong to the technical field of very large scale integrated circuit. The organic resistive random access memory comprises a substrate, a bottom electrode on the substrate, a middle organic functional layer and a top electrode, wherein the middle organic functional layer is a metal-doped TiOPcfilm. During the growth process of the TiOPc film, the even metal doping is introduced to realize the redox reaction of the metal impurity and the organic thin film and to further realize the resistive bistable state. Meanwhile, the even metal doping is artificially introduced to realize the even trap distribution, thereby effectively reducing the instability of the characteristics of a single device and the inhomogeneity of resistive characteristics among different devices, caused by the trap random distribution. The organic resistive random access memory has good chemical stability and temperature stability, and can be realized on the soft substrate, and has high application value in the field of the organic memory with low cost and high performance.