Organic resistive random access memory and manufacturing method thereof

The invention discloses an organic resistive random access memory and a manufacturing method thereof. A substrate of the memory is made of insulating materials, and a device unit is of a transverse MIM capacitor structure. Electrodes on two sides of the MIM capacitor structure are an indium tin oxid (ITO) electrode and an aluminum (Al) electrode respectively, a middle functional layer is of a dual-layer structure formed by two poly-p-xylylene layers, partial oxidative modification is carried out at the positions of interfaces of the two poly-p-xylylene layers, accordingly a weak area beneficial to formation of an electric conduction channel is formed, and the position and the size of the electric conduction channel can be artificially controlled. The organic resistive random access memory can improve device consistency, meanwhile the transverse device structure is beneficial to observation and characterization of device resistance change mechanisms, and adopted poly-p-xylylene is low in preparing cost and is a transparent medium.