A New Generation of Memory Devices Enabled by Ferroelectric Hafnia and Zirconia
2021 IEEE International Symposium on Applications of Ferroelectrics (ISAF)（2021）
摘要
With the emergence of ferroelectric HfO2- and ZrO2-based thin films, the topic of ferroelectric memories has been experiencing a renaissance. These novel ferroelectric materials promise to overcome fundamental scaling and integration roadblocks of the three basic types of ferroelectric memory concepts, FRAM, FeFET and FTJs. While the understanding of the formation of ferro- and antiferroelectric p...
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关键词
Performance evaluation,Industries,Three-dimensional displays,Nonvolatile memory,Ferroelectric films,Capacitors,Random access memory
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