A novel hot carrier-induced blue light-emitting device

Selman Mutlu,Ayşe Erol,Engin Arslan,Ekmel Özbay,Sefer Lişesivdin,Engin Tıraş

Journal of Alloys and Compounds（2021）

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摘要

•TH-HELLISH device is based on the InGaN/GaN multi QW structure.•The emission wavelength and light intensity are independent from the polarity.•Potential usage as XOR optical logic gate.

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关键词

Top-Hat HELLISH,InGaN/GaN multi quantum well,Field effect,XOR logic,Blue light

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