Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate

Matthew Whiteside,Subramaniam Arulkumaran,Geok Ing Ng

Materials Science and Engineering: B（2021）

引用 8|浏览11

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摘要

•GaN transistor with high thermal conductivity boron nitride dielectric film.•Vertically ordered hexagonal-BN by high-power impulse magnetron sputtering.•Enhanced transistor performance due to good interface between boron nitride and GaN.

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关键词

HiPIMS,h-BN,AlGaN/GaN,MISHEMT,Interface state density,Conductance-frequency

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