Gradual Channel Estimation Method for TLC NAND Flash Memory
IEEE Embedded Systems Letters(2022)
摘要
As the storage density of NAND flash increases, the reliability is significantly degraded, making NAND flash memory more sensitive to noise. Among all noise sources, retention noise is a major one. Error correction based on channel parameter estimation is an essential method to deal with retention noise. In this letter, a time-saving channel parameter estimation method for TLC NAND flash memory is...
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关键词
Estimation,Flash memories,Channel estimation,Sensors,Parameter estimation,Standards,Reliability
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