Gradual Channel Estimation Method for TLC NAND Flash Memory

IEEE Embedded Systems Letters(2022)

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摘要
As the storage density of NAND flash increases, the reliability is significantly degraded, making NAND flash memory more sensitive to noise. Among all noise sources, retention noise is a major one. Error correction based on channel parameter estimation is an essential method to deal with retention noise. In this letter, a time-saving channel parameter estimation method for TLC NAND flash memory is...
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关键词
Estimation,Flash memories,Channel estimation,Sensors,Parameter estimation,Standards,Reliability
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