Comparison Investigations on Unclamped-Inductive-Switching Behaviors of Power GaN Switching Devices

This article makes the comparisons on the behaviors of three types of commercial GaN power switching devices, including Schottky gate p-GaN high electron mobility transistor (HEMT), ohmic gate p-GaN HEMT with hybrid drain, and Cascode GaN device, under single-pulse and repetitive unclamp-inductive-switching (UIS) conditions by experiments and simulations. It shows that all the three types of GaN d...