Vapour transport grown photosensitive GeO2 thin film

Ankita Choudhury,Avijit Dalal,Shyam Murli Manohar Dhar Dwivedi,Anupam Ghosh,Nilanjan Halder,Soumik Das,Aniruddha Mondal

Materials Research Bulletin（2021）

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摘要

•Growth of GeO2 TF by the vapour deposition technique.•Modified BAC and Urbach models are used to simulate band to band transitions.•The relative refractive index of GeO2 is theoretically calculated to be ∼ 1.8.•Negative temperature coefficient of resistance is due to oxygen related defects.•Wide temperature dependent stable photosensitivity of device is observed.

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关键词

Vapour transport deposition,GeO2TF,BAC and Urbach model,Photoresponse,High temperature

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