Effects of Breakdown Voltage on Single Event Burnout Tolerance of High-Voltage SiC Power MOSFETs
IEEE Transactions on Nuclear Science(2021)
摘要
Ion- and terrestrial neutron-induced single-event burnout (SEB) data indicate that a thicker, more lightly doped epitaxial (epi) region significantly increases the threshold at which ion-induced SEB occurs in silicon carbide (SiC) power MOSFETs and junction barrier Schottky (JBS) diodes. Simulations indicate that the reduction of power dissipation along the core of the ion track is responsible for...
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关键词
MOSFET,Ions,Epitaxial growth,Silicon carbide,Doping,Power system measurements,Density measurement
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