100 Nm T-Gate Gan-On-Si Hemts Fabricated With Cmos-Compatible Metallization For Microwave And Mm-Wave Applications

100 nm T-gate GaN-on-Si HEMTs fabricated using CMOS-compatible Au-free Ta/Al ohmic and Ti/Al gate contacts are reported in this work. The device exhibited a maximum drain current of 1.82 A/mm, a peak transconductance of 489 mS/mm, a cut-off frequency f(T) of 102 GHz, and a maximum oscillation frequency f(max) of 114 GHz. Good RF performance comparable to their counterparts with Au-contained processes is achieved, demonstrating its potential for cost-effective microwave and mm-wave applications.