An Accurate Parameter Extraction Method For Small Signal Model Of Cnfet

A new small-signal model for carbon nanotube field effect transistor (CNFET) is proposed which incorporates the effect of metallic carbon nanotubes (m-CNTs). The effect of m-CNTs is comprehensively modeled by contact resistance between m-CNTs and source/drain (S/D), which also taken into account a parallel RC circuit composed of C-mts, C-mtd,C- and non-linear resistance R-dsm. An analytical method is presented to extract model parameters. The model is validated using multi-tube (MT) CNFET with eight gate fingers of 400 nm length and 50 mu m width each manufactured in a 700 nm technology. Excellent agreement is achieved between measured and simulated S-parameters in the range over 0.6-10.1 GHz.