Enhanced photoluminescence property of porous silicon treated with bismuth (III)

•Nanoporous silicon (PS) was elaborated by electrochemical anodization of p-type Si.•Deposition of variable thickness of Bismuth (III) solution on porous silicon (PS) by dip-coating chemical process.•Effect of Bi (III) solution treatment on the structural and optical properties of p-type porous silicon is investigated.•A specific emphasis is put on the photoluminescence in terms of Bismuth oxide thickness.