Ku and Ka-band Gallium Nitride Monolithic Integrated Circuits on Silicon Substrates

Yu. V. Fedorov,A. S. Bugaev,S. A. Gamkrelidze,D. L. Gnatyuk,O. S. Matveenko,A. Yu. Pavlov,R. R. Galiev,A. V. Zuev,M. V. Maitama, N. V. Shavruk,K. N. Tomosh

Russian Microelectronics（2021）

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Abstract

For the first time in Russia, the Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences (IUHFSE, RAS) developed, manufactured, and investigated three types of monolithic integrated circuits for the Ku and Ka-bands based on gallium nitride heterostructures on silicon substrates with a diameter of 100 mm. The measured microwave characteristics of the obtained microcircuits are presented.

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