Operation Up to 600K of Vertical β-Ga 2 O 3 Schottky Rectifier With 754V Reverse Breakdown Voltage

There are opportunities for the realization of high performance β -Ga 2 O 3 devices given the theoretically superior figure of merits due to its ultra-wide energy bandgap. The availability of bulk-grown, large diameter substrates can lower the manufacturing cost for β -Ga 2 O 3 power devices for high voltage applications. There are numerous recent advancements in device performance for Ga 2 O 3 di...