An Adaptive Octree Level Set Simulation Method Of The Wet Etching Process For The Fabrication Of Micro Structure On Sapphire Crystal

This paper introduces a MEMS wet etching process simulation platform based on adaptive octree level set method (LSM). Under the limited memory, the mesh adaptive technique for octree can solve the level set simulation problem of MEMS wet etching with large scale, high aspect ratio and fine structure. The octree grid is nonuniform, and the advanced interpolation technology can accurately obtain the signed distance value of the neighbor grid. An advanced interpolation technology is also proposed to solving this problem. Finally, LSM based on adaptive octree technology is applied to the simulation of C-plane sapphire wet etching process. The simulation results indicate that this method can improve the calculation accuracy, reduce the calculation memory and reduce the calculation time in the process of MEMS wet etching simulation.