Significant Performance Improvement In N-Channel Organic Field-Effect Transistors With C-60:C-70 Co-Crystals Induced By Poly(2-Ethyl-2-Oxazoline) Nanodots

Solution-processed organic field-effect transistors (OFETs) have attracted great interest due to their potential as logic devices for bendable and flexible electronics. In relation to n-channel structures, soluble fullerene semiconductors have been widely studied. However, they have not yet met the essential requirements for commercialization, primarily because of low charge carrier mobility, immature large-scale fabrication processes, and insufficient long-term operational stability. Interfacial engineering of the carrier-injecting source/drain (S/D) electrodes has been proposed as an effective approach to improve charge injection, leading also to overall improved device characteristics. Here, it is demonstrated that a non-conjugated neutral dipolar polymer, poly(2-ethyl-2-oxazoline) (PEOz), formed as a nanodot structure on the S/D electrodes, enhances electron mobility in n-channel OFETs using a range of soluble fullerenes. Overall performance is especially notable for (C-60-I-h)[5,6]fullerene (C-60) and (C-70-D-5h(6))[5,6]fullerene (C-70) blend films, with an increase from 0.1 to 2.1 cm(2) V-1 s(-1). The high relative mobility and eighteen-fold improvement are attributed not only to the anticipated reduction in S/D electrode work function but also to the beneficial effects of PEOz on the formation of a face-centered-cubic C-60:C-70 co-crystal structure within the blend films.