Temperature-Dependent Low-Frequency Noise Analysis of ZnO Nanowire Field-Effect Transistors

Low-frequency noise characteristics of ZnO nanowire field-effect transistors (FETs) are presented at temperatures down to 10 K. The carrier number fluctuation (CNF) model and Hooge’s model are used to analyze the low-frequency noise in the studied devices. From 293 down to 200 K, the normalized noise power spectrum density (PSD) is proportional to $({g}_{m}/{I}_{d}{)}^{{2}}$ due to CNF caused by...