An Improved Fourier-Series-Based IGBT Model by Mitigating the Effect of Gibbs Phenomenon at Turn on

Xin Yang,Yifei Ding,Jun Wang,Guoyou Liu,Patrick R. Palmer

IEEE Transactions on Electron Devices（2021）

引用 11|浏览7

暂无评分

摘要

The Fourier-series-based insulated-gate bipolar transistor (IGBT) model has been very effective in simulating its switching behaviors and meanwhile, reflecting carrier dynamics. However, in turn-on process, such a model has difficulty in distinguishing the boundary between undepleted area and depletion layer of the drift region due to Gibbs phenomenon and therefore, cannot accurately describe the ...

查看译文

关键词

Mathematical model,Insulated gate bipolar transistors,Load modeling,Integrated circuit modeling,Fourier series,Switches,Predictive models

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要